科宇系統有限公司

Mercury Probe C-V map Systems:

Measurement techniques Capacitance-Voltage (CV):

• Cd (square wave deep pulse)
• Cq (square wave quasi static)
• Ch (square wave high frequency)
• Sinusoidal Ch (Agilent 4192A, 4285 A, Keithley 590)

        Current Voltage

• Current range 10fA to 1mA, Voltage range up to +/-100V
• Extended Voltage range +/- 1000V (Keithley 2410, 237)
• Constant current
• Constant voltage
• Multi-terminal IV curves (pseudo MOST technique) 

Silicon Oxide And Gate Material, Characterization And Integrity Monitoring:

• Cox (Oxide capacitance)
• tox (Oxide thickness)
• K value (dielectric constant)
• K-f (frequency dependent dielectric constant)
• teq (equivalent oxide thickness)
• Vfb (flat band voltage)
• Dit (Interface trap density)
• (Sheet) Resistance and Resistivity measurement of SiO2 and semi-insulating materials
• TDDB (Time dependent dielectric breakdown) tests:
• tbd (time to breakdown)
• Qbd (Charge to Breakdown)
• Vbd (ramp breakdown Voltage)
• Defect density (Density of defect causing early breakdown, e.g. Pinhole density)
• Cumulative 

Compound Semiconductors

• N(W) Carrier density profiling
• Resistivity of semi-insulating substrates or layers
• Pinch-off Voltage 

High Resistivity Materials

• I-V (Current vs. Voltage)
• (Sheet) Resistance and Resistivity measurement 

Ferroelectric materials

• K-E (dielectric vs. electric field)
• P-E (polarization vs. electric field)
• K-f (dielectric vs. frequency) with Model 192 probe station
• K-T (dielectric vs. temperature) with temperature chamber for Tc (Curie temperature)
• Hysteresis loop